VSMB2948SL www.vishay.com vishay semiconductors rev. 1.0, 07-feb-13 1 document number: 83498 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high speed infrared emitting diodes, 940 nm, gaalas, mqw description VSMB2948SL is an infrared, 940 nm, side looking emitting diode in gaalas multi quantum well (mqw) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (smd). applications ? remote control ? ir touch panels features ? package type: surface mount ? package form: side view ? dimensions (l x w x h in mm): 2.3 x 2.55 x 2.3 ? peak wavelength: ? p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 25 ? low forward voltage ? suitable for high pulse current operation ? package matches with detector vemd2023slx01 and vemt2023slx01 ? floor life: 4 weeks, msl 2a, acc. j-std-020 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ? ? note ? test conditions see table basic characteristics note ? moq: minimum order quantity product summary component i e (mw/sr) ? (deg) ? p (nm) t r (ns) VSMB2948SL 20 25 940 15 ordering information ordering code packaging remarks package form VSMB2948SL tape and reel moq: 3000 pcs, 3000 pcs/reel side view absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma surge forward current t p = 100 s i fsm 500 ma power dissipation p v 160 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature accordi ng figure 9, j-std-020 t sd 260 c thermal resistance junction/ambient j-std-051, leads 7 mm, soldered on pcb r thja 250 k/w
VSMB2948SL www.vishay.com vishay semiconductors rev. 1.0, 07-feb-13 2 document number: 83498 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature 0 20 40 60 80 100 120 140 160 180 0 102030405060708090100 21343 t amb - ambient temperature (c) p v - power dissipation (mw) r thja = 250 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 21344 r thja = 250 k/w t amb - ambient temperature (c) i f - forward current (ma) basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.15 1.35 1.6 v i f = 500 ma, t p = 100 s v f 1.8 v temperature coefficient of v f i f = 1 ma tk vf - 1.5 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 21 pf radiant intensity i f = 100 ma, t p = 20 ms i e 10 20 30 mw/sr i f = 500 ma, t p = 100 s i e 90 mw/sr radiant power i f = 100 ma, t p = 20 ms ? e 40 mw temperature coefficient of ? radiant power i f = 1 ma tk ? e - 1.1 %/k angle of half intensity ? 25 deg peak wavelength i f = 30 ma ? p 920 940 960 nm spectral bandwidth i f = 30 ma ?? 25 nm temperature coefficient of ? p i f = 30 ma tk ? p 0.25 nm/k rise time i f = 100 ma, 20 % to 80 % t r 15 ns fall time i f = 100 ma, 20 % to 80 % t f 15 ns cut-off frequency i dc = 70 ma, i ac = 30 ma pp f c 23 mhz
VSMB2948SL www.vishay.com vishay semiconductors rev. 1.0, 07-feb-13 3 document number: 83498 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - relative forward voltage vs. ambient temperature fig. 5 - radiant intensity vs. forward current fig. 6 - relative radiant in tensity vs. ambient temperature fig. 7 - relative radi ant power vs. wavelength fig. 8 - relative radiant in tensity vs. angular displacement 1 10 100 1000 0.5 0.7 1.7 1.9 t p = 100 s v f - forward voltage (v) i f - forward current (ma) 1.5 1.3 1.1 0.9 90 92 94 96 98 100 102 104 106 108 110 - 40 - 20 0 20 40 60 80 100 t amb - ambient temperature (c) v f, rel - relative forward voltage (%) i f = 100 ma i f = 10 ma i f = 1 ma 21443 t p = 20 ms 0.1 10 100 1000 0.001 0.1 1 t p = 100 s i f - forward current (a) i e - radiant intensity (mw/sr) 1 0.01 40 60 80 100 120 140 160 180 - 60 - 40 - 20 0 20 40 60 80 100 t amb - ambient temperature (c) i e rel - relative radiant intensity (%) t p = 20 ms i f = 1 ma 21444 i f = 100 ma 0 10 20 30 40 50 60 70 80 90 100 840 880 920 960 1000 1040 - wavelength (nm) 21445 e rel - relative radiant power (%) i f = 30 ma 22690 i e rel - relative radiant intensity ? - angular displacement 0.4 0.2 0 0.6 0 10 20 0.9 0.8 30 40 50 60 70 80 0.7 1.0
VSMB2948SL www.vishay.com vishay semiconductors rev. 1.0, 07-feb-13 4 document number: 83498 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 solder profile fig. 9 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in moisture barrier bags (mbb) to prevent the products from mo isture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: ? floor life: 4 weeks ? conditions: t amb < 30 c, rh < 60 % ? moisture sensitivity leve l 2a, acc. to j-std-020. drying in case of moisture absorpti on devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry us ing recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions in millimeters: VSMB2948SL 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
VSMB2948SL www.vishay.com vishay semiconductors rev. 1.0, 07-feb-13 5 document number: 83498 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 taping and reel dimensions in millimeters : VSMB2948SL
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